SSF4NS60D ? silikron semiconductor co.,ltd. 20 12 . 08 .2 7 version : 1. 0 page 1 of 8 www.silikron.com main product characteristics: features and benefits : description : absolute max rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 4 a i d @ tc = 100c continuous drain current, v gs @ 10v 2.5 i dm pulsed drain current 12 p d @tc = 25c power dissipation 50 w linear derating factor 0. 4 w/c v ds drain - source voltage 6 0 0 v v gs gate - to - source voltage 30 v e as single pulse avalanche energy @ l= 22.4 m h 54 mj i ar avalanche current @ l= 22.4 mh 2.2 a t j t stg operating junction and storage temperature range - 55 to + 150 c v dss 60 0 v r ds (on) 1.1 (typ . ) i d 4 a to - 252 marking and pin assignment schematic diagram feathers: ? high dv/dt and avalanche capabilities ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance the ss f 4ns60 d series mosfets is a new technology , which combines an innovative super junction technology and advance process. t his new technology ac hieves low rdson, energy saving, high reliability and uniformity, superior power density and space saving .
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 2 of 8 www.silikron.com thermal resistance symbol characterizes typ. max. units r jc junction - to - case 2 .5 /w r j a junction - to - ambient ( t 10s ) 75 /w electrical characterizes @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 60 0 v v gs = 0v, i d = 250a r ds(on) static drain - to - source on - resistance 1.1 1.2 v gs =10v , i d = 2.8 a 2.8 t j = 1 25 c v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 2 50a 2. 7 t j = 1 25 c i dss drain - to - source leakage current 1 a v ds = 60 0 v,v gs = 0v 50 t j = 125 c i gss gate - to - source forward leakage 1 00 na v gs = 3 0 v - 1 00 v gs = - 3 0 v q g total gate charge 8.3 nc i d = 4 a , v ds = 1 00 v , v gs = 10v q gs gate - to - source charge 2.3 q gd gate - to - drain("miller") charge 2.6 t d(on) turn - on delay time 9.8 ns v gs =10v, v ds = 38 0 v, r gen = 18 , i d = 4 a t r rise time 17.6 t d(off) turn - off delay time 19.0 t f fall time 1 5.3 c iss input capacitance 268 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 222 c rss reverse transfer capacitance 4.62 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 4 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 12 a v sd diode forward voltage 0. 88 1 . 2 v i s = 2.8 a, v gs =0v t rr reverse recovery time 180 n s t j = 25c , i f = i s , di/dt = 10 0a/s q rr reverse recovery charge 1304 n c
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 3 of 8 www.silikron.com test circuits and waveforms switch waveforms: n otes : calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 4 of 8 www.silikron.com t ypical electrical and thermal characteristics fig ure 2. gate to source cut - off voltage figure 1: typical output characteristics fig ure 3. drain - to - source breakdown voltage v s. case temperature figure 4: normalized on - resistance vs. case temperature
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 5 of 8 www.silikron.com fig ure 5 . maximum drain current vs. case temperature t ypical electrical and thermal characteristics fig ure 6 . typical capacitance vs. drain - to - source voltage fig ure 7 . maximum effect ive transient thermal impedance junction - to - case
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 6 of 8 www.silikron.com mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) to - 252 package outline dimension
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 7 of 8 www.silikron.com ordering and marking information device marking: ssf 4 ns60 d package (available) to - 252(dpak) operating temperature range c : - 55 to 1 50 oc devices per unit reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 1 5 0 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices option1 tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 2 5000 7 35000 option2 tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 1 2500 10 25000 package type units/tape package type units/tape
ss f 4ns60d ? silikron semiconductor co.,ltd . 20 12 . 08 .2 7 version : 1. 0 page 8 of 8 www.silikron.com attention: any and all silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably exp ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other param eters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in a n independent device, th e customer should always evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor pr oducts fail with some probability. it is possible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the e vent that any or all silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export licen se from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron be lieves information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein ar e subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. this catalog provides information as of dec, 2008. specifications and information herein are subject to change without notice. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. 11a, 4 2 8 xinglong street, suzhou industrial park, p.r.china tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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